کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9672230 | 1450564 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal and electrostatic reliability characterization in RF MEMS switches
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The reliability of RF MEMS switches is closely linked to their operational and environmental conditions. This paper examines the reliability of five different capacitive switch designs by a combined use of modeling and experimental tools. Three-dimensional multiphysics finite element analysis was performed to estimate the actuation voltage and deflection vs. temperature variations of the micro-switches. The effect of temperature and temperature cycles on switch dilatation and pull-in voltage are studied, as well as the influence of different operational signals on switch reliability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issues 9â11, SeptemberâNovember 2005, Pages 1790-1793
Journal: Microelectronics Reliability - Volume 45, Issues 9â11, SeptemberâNovember 2005, Pages 1790-1793
نویسندگان
Q.-H. Duong, L. Buchaillot, D. Collard, P. Schmitt, X. Lafontan, P. Pons, F. Flourens, F. Pressecq,