کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9672232 | 1450564 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The dc and the low frequency noise in Si bipolar junction transistors (BJTs) of a 0.13 μm CMOS technology are presented in this paper. In particular, the influence of a superficial base doping (SBD) layer is investigated in devices before and after hot-carrier stress induced degradation. A classical increase in the perimeter non-ideal (generation/recombination) base current is observed on stressed transistors. Prestress 1/f noise analysis shows that both surface and perimeter contribution are present. Their relative importance is dependent on presence or not of the SBD and of the geometry. After stress, a very significant increase in the 1/f noise level is measured. It is associated to the creation of a large number of traps at the emitter perimeter.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issues 9â11, SeptemberâNovember 2005, Pages 1800-1806
Journal: Microelectronics Reliability - Volume 45, Issues 9â11, SeptemberâNovember 2005, Pages 1800-1806
نویسندگان
P. Benoit, J. Raoult, C. Delseny, F. Pascal, L. Snadny, J.-C. Vildeuil, M. Marin, B. Martinet, D. Cottin, O. Noblanc,