کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9672232 1450564 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors
چکیده انگلیسی
The dc and the low frequency noise in Si bipolar junction transistors (BJTs) of a 0.13 μm CMOS technology are presented in this paper. In particular, the influence of a superficial base doping (SBD) layer is investigated in devices before and after hot-carrier stress induced degradation. A classical increase in the perimeter non-ideal (generation/recombination) base current is observed on stressed transistors. Prestress 1/f noise analysis shows that both surface and perimeter contribution are present. Their relative importance is dependent on presence or not of the SBD and of the geometry. After stress, a very significant increase in the 1/f noise level is measured. It is associated to the creation of a large number of traps at the emitter perimeter.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issues 9–11, September–November 2005, Pages 1800-1806
نویسندگان
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