کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9697390 | 1460824 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Silicon-on-diamond: An advanced silicon-on-insulator technology
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Silicon-on-diamond (SOD) technology is proposed as an advanced alternative to conventional silicon-on-insulator (SOI) technology. In SOD, the electrical insulator is diamond, the best thermal conductor in nature. In our SOD concept, the diamond film is highly oriented (HOD), 75-100 μm thick and serves as an electrical insulator, heat spreader and substrate. In this paper, we focus on the thermal evaluation of SOD with a Si device layer on the nucleation side of the diamond film. The obtained results indicated that SOD can sustain up to 10-times higher power loads than SOI. The results were experimentally obtained by R(T) measurements of micro-heaters deposited on the Si device layer and by thermal imaging. 3D finite element thermal simulations using ANSYS confirmed that these numbers are in good agreement with expectations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 14, Issues 3â7, MarchâJuly 2005, Pages 308-313
Journal: Diamond and Related Materials - Volume 14, Issues 3â7, MarchâJuly 2005, Pages 308-313
نویسندگان
A. Aleksov, X. Li, N. Govindaraju, J.M. Gobien, S.D. Wolter, J.T. Prater, Z. Sitar,