Growth of phosphorus-doped diamond using tertiarybutylphosphine and trimethylphosphine as dopant gases

Phosphorus-doped diamond films with n-type conductivity were grown by plasma-enhanced chemical vapor deposition using the organophosphorus gases, tertiarybutylphosphine (TBP) and trimethylphosphine (TMP). It was confirmed that phosphorus is incorporated into homoepitaxial diamond films, regardless of whether the dopant gas is TBP or TMP. Based on Hall-effect and cathodoluminescence measurements, their properties were investigated through comparison with P-doped diamond using phosphine PH3 gas, and the results revealed that there are few differences between the films grown with TBP, TMP, and also PH3. The high potential of TBP and TMP as alternative P precursors for P-doped diamond growth was shown.