کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9697425 | 1460824 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optically triggered Schottky barrier diodes in single crystal diamond
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The superior material properties of diamond as a semiconducting material can be exploited in many power devices. In this study we show an optically triggered Schottky Barrier Diode (SBD) structure which operates by going into avalanche breakdown with the aid of incident photons from a light source. The source shines through a window patterned into the Schottky cathode contact. The avalanche multiplication is aided by the large electric field set up by the reverse bias applied across a near intrinsic diamond layer. We will demonstrate numerically that the triggering voltage can be controlled by the intensity of irradiated light onto the device, thus increasing the applicability of this device in high voltage switching modules where isolated switches are used.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 14, Issues 3â7, MarchâJuly 2005, Pages 499-503
Journal: Diamond and Related Materials - Volume 14, Issues 3â7, MarchâJuly 2005, Pages 499-503
نویسندگان
M. Brezeanu, S.J. Rashid, T. Butler, N.L. Rupesinghe, F. Udrea, K. Okano, G.A.J. Amaratunga, D.J. Twitchen, A. Tajani, C. Wort, M.P. Dixon,