کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9758777 1496844 2005 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impact of interfacial barriers on recombination profile in bilayer organic light-emitting diode
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Impact of interfacial barriers on recombination profile in bilayer organic light-emitting diode
چکیده انگلیسی
An analysis of recombination in bilayer organic light-emitting diodes is presented using numerical simulations and analytical model. It is shown using simulations that although recombination occurs close to the organic-organic interface, the recombination peak can lie either in the hole transport layer (HTL) or the electron transport layer (ETL) of the device. An analytical model is presented which provides insight into charge accumulation and transport across the organic interface and explains the shift in recombination peak with changes in interfacial barrier heights. The impact of interfacial barrier heights on electric field at the organic interface is also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 6, Issues 5–6, December 2005, Pages 229-236
نویسندگان
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