کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9761730 | 1498426 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and characterization of proton-conducting CsHSO4-SiO2 nanocomposite electrolyte membranes
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Microstructures and conductivity characteristics were investigated in proton-conducting CsHSO4-SiO2 composite electrolyte membranes prepared by CsHSO4 melt infiltration into porous SiO2 membranes with average pore sizes of 290 and 4 nm, respectively. XRD and TG-DTA analyses revealed that the pore-filled CsHSO4 proton-conducting phases in the nanocomposite electrolyte with the 290-nm SiO2 pores consisted of two crystallized CsHSO4 bulk phases and an amorphous CsHSO4 interface phase. For the electrolyte with 4-nm SiO2 pores, however, only the amorphous CsHSO4 interface phase dispersed with CsHSO4 crystallites was present in the nanocomposite. AC impedance measurements indicated that the proton-conducting characteristic of the nanocomposite with the 290-nm SiO2 membrane pores was similar to that of the pure CsHSO4 electrolyte, whereas the nanocomposite with 4-nm pores exhibited a high-temperature CsHSO4 proton-conducting characteristic across the entire testing temperature range, from nearly room temperature up to 200 °C, thus showing a significant enhancement in low-temperature conductivity vs. the pure CsHSO4 electrolyte-by two to three orders of magnitude. Moreover, the amorphous CsHSO4 interface phase in the nanocomposite with the 4-nm SiO2 pores was demonstrated to be stable even after having been kept at 40 °C for 1 week.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Ionics - Volume 176, Issues 7â8, 28 February 2005, Pages 755-760
Journal: Solid State Ionics - Volume 176, Issues 7â8, 28 February 2005, Pages 755-760
نویسندگان
Shuqiang Wang, Junichiro Otomo, Masaru Ogura, Ching-ju Wen, Hidetoshi Nagamoto, Hiroshi Takahashi,