Low temperature dielectric behavior and ac conductivity in metal-containing chalcogenide Ge2S3 films

The capacitance measurements are found to obey the scaling relation C=Aln(Tω−1), which suggests a relaxation tunneling conduction mechanism. In addition, the analysis of the results suggests that the electronic conduction on adding Cd or Cu to the chalcogenide Ge2S3 films occurs via correlated barrier hopping of electrons. On the other hand, at lower temperatures, there is a deviation in the conduction mechanism from the predictions of the correlated barrier-hopping model.