کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9775271 | 1509193 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal transport in SiC nanostructures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
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چکیده انگلیسی
SiC is a robust semiconductor material considered ideal for high-power application due to its material stability and large bulk thermal conductivity defined by the very fast phonons In this paper, however, we show that both material-interface scattering and total internal reflection significantly limit the SiC-nanostructure phonon transport and hence the heat dissipation in a typical device. For simplicity we focus on planar SiC nanostructures and calculate the thermal transport both parallel to the layers in a substrate/SiC/oxide heterostructure and across a SiC/metal gate or contact. We find that the phonon-interface scattering produces a heterostructure thermal conductivity significantly smaller than what is predicted in a traditional heat transport calculation. We also document that the high temperature heat flow across the metal/SiC interface is limited by total internal reflection effects and maximizes with a small difference in the metal/SiC sound velocities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: C - Volume 25, Issues 5â8, December 2005, Pages 635-640
Journal: Materials Science and Engineering: C - Volume 25, Issues 5â8, December 2005, Pages 635-640
نویسندگان
E. Ziambaras, P. Hyldgaard,