کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9775283 | 1509193 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structure calculations for ZnSxSe1âx
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electronic structure calculations for ZnSxSe1âx Electronic structure calculations for ZnSxSe1âx](/preview/png/9775283.png)
چکیده انگلیسی
Energy band gaps and electron effective mass as well as their composition dependence are the most critical parameters for band structure calculations of semiconductor alloys. Therefore, an accurate knowledge of these parameters is very important. Unfortunately, there is a limited experimental and theoretical information in the literature regarding the electronic band parameters for zinc blende ZnSxSe1âx. This has incited us to carry out such calculations. For this purpose, we have used the empirical pseudo potential method within the Virtual Crystal Approximation and the effect of compositional disorder is treated as an effective potential. The band gap variation versus sulfur concentration x shows two different behaviors: clear diminution of gap energy for low concentrations, and quasi-linear behavior with a small bowing for large values of x. Furthermore, the calculated effective mass shows that the disorder is not only compositional but also structural.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: C - Volume 25, Issues 5â8, December 2005, Pages 691-694
Journal: Materials Science and Engineering: C - Volume 25, Issues 5â8, December 2005, Pages 691-694
نویسندگان
S. Ben Afia, H. Belmabrouk, M. Said, S.Abdi-Ben Nasrallah, N. Bouarissa,