کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9782939 | 1511866 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
GaO2H, α-Ga2O3 and β-Ga2O3 powders synthesized from ball-milled GaN powders
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
GaO2H, α-Ga2O3 and β-Ga2O3 powders were synthesized from mechanically ground GaN powders with thermal annealing in a nitrogen atmosphere. The structural properties of GaO2H, α-Ga2O3 and β-Ga2O3 powders were investigated by X-ray powder diffraction (XRD), Fourier transform infrared (FT-IR) and scanning electron microscopy (SEM). The studies revealed that the samples obtained by ball-milled GaN for 4 h are orthorhombic crystalline GaO2H phase. However, when GaO2H were annealed in a nitrogen atmosphere at 550 and 950 °C, α-Ga2O3 and β-Ga2O3 powders were obtained, respectively. SEM images indicated that the morphologies of GaO2H, α-Ga2O3 and β-Ga2O3 are ruleless, and their sizes are in the range of about 300-70, 150-70, and 150-70 nm, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 94, Issues 2â3, 15 December 2005, Pages 261-265
Journal: Materials Chemistry and Physics - Volume 94, Issues 2â3, 15 December 2005, Pages 261-265
نویسندگان
Hong-Di Xiao, Hong-Lei Ma, Wei Liang, Cheng-Shan Xue, Hui-Zhao Zhuang, Jin Ma, Wen-Rong Hu,