کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9783130 | 1511869 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Removal efficiency of organic contaminants on Si wafer surfaces by the N2O ECR plasma technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
The organic contamination by volatile organics outgassed from the plastic wafer storage is one of the very important concerns in ultra clean processing of silicon surface. In this study, silicon surfaces have been artificially contaminated by above kind of volatile organics and subsequent cleaning has been performed by N2O electron cyclotron resonance (ECR) plasma treatment with different exposure times. A trace amount of contaminants on the silicon surface has been measured by attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR). The results indicate that efficient removal of organic contaminants from the semiconductor surface can be achieved with a short time exposure of N2O ECR plasma.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 91, Issues 2â3, 15 June 2005, Pages 490-493
Journal: Materials Chemistry and Physics - Volume 91, Issues 2â3, 15 June 2005, Pages 490-493
نویسندگان
Dae Kyu Kim, Yun Kyu Park, Subhayan Biswas, Chongmu Lee,