کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9783180 | 1511870 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influencing factors on the pyroelectric properties of Pb(Zr,Ti)O3 thin film for uncooled infrared detector
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Zr-rich PZT thin films were synthesized by metallorganic decomposition and their dielectric and pyroelectric properties were investigated with different ratios of zirconium/titanium and poling condition. All the films became effectively (1 1 1) textured and well crystallized at the annealing temperature of 700 °C. With increasing Zr content, coercive field increased and voltage dependent capacitance curve appeared asymmetrical, indicating the presence of antiferroelectric phase, PbZrO3, in film composition. The pyroelectric coefficient in the practically applicable temperature ranges of 20-60 °C was found to be maximum for the thin film with 0.85 mol of zirconium in PZT. Further increase in zirconium content led to severe deterioration in pyroelectric properties. The values of pyroelectric coefficient and figures of merit were greatly influenced by poling direction and temperature. The result was explained in terms of electric phase and state of polarization in film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 90, Issues 2â3, 15 April 2005, Pages 411-416
Journal: Materials Chemistry and Physics - Volume 90, Issues 2â3, 15 April 2005, Pages 411-416
نویسندگان
Dong Heon Kang, Kyung Woo Kim, Sung Yoon Lee, Young Ho Kim, Sang Keun Gil,