کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9783957 | 1512026 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of 100Â nm gate length MOSFET's using a novel carbon nanotube-based nano-lithography
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of 100Â nm gate length MOSFET's using a novel carbon nanotube-based nano-lithography Fabrication of 100Â nm gate length MOSFET's using a novel carbon nanotube-based nano-lithography](/preview/png/9783957.png)
چکیده انگلیسی
PECVD-grown carbon nanotubes on (1 0 0)silicon substrates have been studied and exploited for electron emission applications. After the growth of vertical CNT's [Y. Abdi, J. Koohsorkhi, J. Derakhshandeh, S. Mohajerzadeh, H. Hosseinzadegan, M.D. Robertson, C. Benet, EMRS Spring Meeting, Strasbourg, France, May 2005] the grown nanotubes are encapsulated by means of an insulating TiO2 layer, leading to beam-shape emission of electrons from the cathode towards the opposite anode electrode. The electron emission occurs using an anode-cathode voltage of 100 V with ability of direct writing on a photo-resist-coated substrates. Straight lines with widths between 50 and 200 nm have been successfully drawn. This technique has been applied on P-type (1 0 0)silicon substrates for the formation of the gate of N-MOSFET devices. The successful realization of MOSFET devices indicates its usefulness for applications in nano-electronic devices. This device has inversion COX exceeding 0.7 μF/cm2, drive current equal to 310 μA/μm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 354-358
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 354-358
نویسندگان
J. Derakhshandeh, Y. Abdi, S. Mohajerzadeh, H. Hosseinzadegan, E. Asl. Soleimani, H. Radamson,