An investigation on the modeling of boron-enhanced diffusion of ultralow energy implanted boron in silicon

We have simulated the boron-enhanced diffusion (BED) of boron implanted in silicon. We have used published data for B implantation with an energy of 500 eV in crystalline silicon. The simulation well reproduces the experimental profiles when sinks for interstitials are considered. Sources and sinks of self-interstitials are discussed as function of temperature.