کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9783973 | 1512026 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations](/preview/png/9783973.png)
چکیده انگلیسی
We have used the simulator of TITAN process. The latter uses the finished elements method for the equations resolution of codiffusion. We have simulated arsenic (1016 atoms cmâ2, 100 keV) and boron (2 Ã 1015 atoms cmâ2, 30 keV) codiffusion profiles in the monosilicon, after rapid thermal annealing (RTA) by using the parameters by defect of simulator. We have noted the difference between the experimental distribution profiles measured with secondary ion mass spectrometry (SIMS) and those simulated. This lead us to readjust the profiles, changing the dopant diffusion coefficient in order to obtain the simulated profiles corresponding in a better way to the experimental profiles. The arsenic diffusivity values vary from 2 Ã 10â13 to 2 Ã 10â12 cm2/s in the amorphised zone; and from 4 Ã 10â16 to 6 Ã 10â14 cm2/s in the crystalline zone. As far as boron is concerned, they are from 10â15 to 6 Ã 10â14 cm2/s and from 10â14 to 4 Ã 10â13 cm2/s in the two zones cited, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 419-423
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 419-423
نویسندگان
A. Merabet,