کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9784104 | 1512029 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
SnO2 films: formation, electrical and optical properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The authors investigated the influence of technological conditions on the properties of thin films of tin dioxide (SnO2) deposited with reactive magnetron sputtering in Ar-O2 carrier gas mixture. The optimal technological regimes were determined to grow high quality films with high transparency and low specific resistivity. The possible nature of the processes taking place during film deposition and annealing is discussed. Our experiments shown that films deposited at the temperature of 473 K were characterized with lower material defect level. Further annealing of these films in the air at 700 K resulted in significant decrease of their specific resistivity (down to 1.5 Ã 10â3 to 6 Ã 10â4 Ω cm) and increase of optical transmission (up to 90-95%).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 118, Issues 1â3, 25 April 2005, Pages 160-163
Journal: Materials Science and Engineering: B - Volume 118, Issues 1â3, 25 April 2005, Pages 160-163
نویسندگان
P.M. Gorley, V.V. Khomyak, S.V. Bilichuk, I.G. Orletsky, P.P. Horley, V.O. Grechko,