کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9784128 1512029 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Oxynitrides on 4H-SiC(0 0 0 1)
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Oxynitrides on 4H-SiC(0 0 0 1)
چکیده انگلیسی
The grown layers were investigated by photoelectron spectroscopy (XPS) for chemical analysis. Concerning the chemical analysis, the general nitrogen content of the samples is compared at different preparation conditions. The films are found to consist mainly of SiO2 and small fraction of silicon nitride. Only a tenth of the nitrogen was incorporated as oxynitride. The results obtained for oxynitride thin films on 4H-SiC are compared to similarly prepared oxynitride layers on Si(1 1 1) investigated in the past. Furthermore, an additional source of nitrogen due to dopand diffusion in the SiC single crystal is reported.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 118, Issues 1–3, 25 April 2005, Pages 270-274
نویسندگان
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