Broadband traveling-wave modulator based on Si2N2O substrate

A broadband travelling-wave modulator is proposed based on Si2N2O substrate with ridge structure. The structure is analyzed using finite element method. At 1.5 μm wavelength the modulator operates with a 3 dB optical bandwidth of 119.37 GHz, a half-wave driving voltage of 3.5 V, and characteristic impedance of 50.32 Ω. The results show that broad bandwidth and low half-wave voltage can be achieved simultaneously.