کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9785744 | 1512654 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Amplification of microchip oscillator emission using a diode-pumped wedged-slab amplifier
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Amplification of microchip oscillator emission using a diode-pumped wedged-slab amplifier Amplification of microchip oscillator emission using a diode-pumped wedged-slab amplifier](/preview/png/9785744.png)
چکیده انگلیسی
A master-oscillator power-amplifier (MOPA) system combines a 1064-nm microchip laser oscillator with a new diode-side-pumped Nd:YVO4 zig-zag slab amplifier design. With 40 W of diode pump power, the amplifier increases microchip average power from 200 mW to more than 2.5 W at a 10-kHz pulse rate for a single pass through the amplifier, and to 5.7 W for two-passes, while preserving microchip laser beam quality and emission spectrum. Pulse energy of more than 800 μJ was achieved at a 2-kHz pulse rate. These results are the highest reported to date in an amplified microchip laser system. The 15-mm-long Nd:YVO4 slab has thin-film-coated lateral sides that enable a zig-zag gain length longer than 5.5 cm for a single pass through the slab, which is the longest reported to date. The unique slab design has non-parallel or wedged lateral sides to prevent build-up of amplified spontaneous emission. The two-pass beam is separated from the input beam without using a Faraday device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 252, Issues 1â3, 1 August 2005, Pages 117-126
Journal: Optics Communications - Volume 252, Issues 1â3, 1 August 2005, Pages 117-126
نویسندگان
Jeffrey G. Manni,