کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9785852 1512658 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication of a 4 × 4 strictly nonblocking SOI switch matrix
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Fabrication of a 4 × 4 strictly nonblocking SOI switch matrix
چکیده انگلیسی
A 4 × 4 strictly nonblocking thermo-optical switch matrix based on Mach-Zehnder (MZ) switching unit was designed and fabricated in silicon-on-insulator (SOI) wafer. The paired multi-mode interferometers (MMI) were used as power splitters and combiners in MZ structures. The device presents an average insertion loss of 17 dB and an average crosstalk of 16.5 dB. The power consumption needed for operation is reduced to 0.288 W by adding isolating trenches. The switching time of the device is about 15 μs, which is much faster than that of silica-based switches.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 250, Issues 1–3, 1 June 2005, Pages 48-53
نویسندگان
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