کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9793075 1513960 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Numerical modeling of the superconducting flux flow transistor with a nanobridge
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مکانیک محاسباتی
پیش نمایش صفحه اول مقاله
Numerical modeling of the superconducting flux flow transistor with a nanobridge
چکیده انگلیسی
We have fabricated superconducting flux flow transistors (SFFTs) with a nanobridge from epitaxial superconducting thin films by photolithography and electron-beam lithography. We have tried to simulate their I-V characteristics by building a model. The simulation was performed by varying the penetration depth as a function of the width and the thickness in the nanobridge and the gate current. This model showed the dependence of the critical current density on the spatial distribution of an applied magnetic field induced by the gate current. The simulated I-V curves were well in agreement with the measured curves in the flux creep regime of an SFFT with a nano-scale channel. This model is suitable for prediction of the I-V characteristics in the flux creep regime of the SFFT with a nano-scale channel.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computational Materials Science - Volume 33, Issues 1–3, April 2005, Pages 325-330
نویسندگان
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