کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9796140 1514941 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Atomic-scale details of dislocation-stacking fault tetrahedra interaction
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Atomic-scale details of dislocation-stacking fault tetrahedra interaction
چکیده انگلیسی
Stacking fault tetrahedra (SFTs) are formed during irradiation of f.c.c. metals and alloys with low stacking fault energy. The high number density of SFTs observed suggests that they should contribute to radiation-induced hardening and, therefore, be taken into account when estimating mechanical property changes of irradiated materials. The key issue is to describe the interaction between a moving dislocation and an individual SFT, which is characterized by a small physical scale of about 100 nm. In this paper we present results of an atomistic simulation of edge and screw dislocations interacting with small SFTs at different temperatures and strain rates and present mechanisms which can explain the formation of defect-free channels observed experimentally.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volumes 400–401, 25 July 2005, Pages 370-373
نویسندگان
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