کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9796159 | 1514941 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An indentation method to measure the CRSS of semiconducting materials at elevated temperature
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An indentation method that allows to determine the critical resolved shear stress (CRSS) of semiconductors as a function of temperature is described. Specimens have to be thinned in such a way, that plastic flow throughout the thickness is generated. Assuming mechanical equilibrium allows to extract the CRSS from the plastic-zone perimeter evolution with changing load. At elevated temperature, we have estimated the thermal gradient in the specimens between the diamond tip and the heating stage and its influence on the local mechanical properties. The map of the temperature around the indent site allows to define an average CRSS of the material which is successfully compared with our experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: A - Volumes 400â401, 25 July 2005, Pages 451-455
Journal: Materials Science and Engineering: A - Volumes 400â401, 25 July 2005, Pages 451-455
نویسندگان
J.P. Rivière, L. Largeau, G. Patriarche, E. Le Bourhis,