کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
979779 | 933392 | 2006 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Novel analytical and numerical approach to modeling low-frequency noise in semiconductor devices
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موضوعات مرتبط
مهندسی و علوم پایه
ریاضیات
فیزیک ریاضی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this work, based on robust experimental results, we derive a novel theoretical probabilistic approach to model the low-frequency noise power S(f) in semiconductor devices. Using the proposed approach we obtained, analytically, the average of the integrated noise power Wp=â«fLfHS(f)df as a function of the frequency bandwidth [fL,fH], showing that ãWpãâln2(fH/fL). The second moment and the relative error in Wp are also calculated. A numerical fit for the relative error was performed, showing that lower and upper bound estimates to noise power depend only on the ratio fH/fL.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica A: Statistical Mechanics and its Applications - Volume 362, Issue 2, 1 April 2006, Pages 277-288
Journal: Physica A: Statistical Mechanics and its Applications - Volume 362, Issue 2, 1 April 2006, Pages 277-288
نویسندگان
Roberto da Silva, Gilson I. Wirth, Ralf Brederlow,