کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
979779 933392 2006 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Novel analytical and numerical approach to modeling low-frequency noise in semiconductor devices
موضوعات مرتبط
مهندسی و علوم پایه ریاضیات فیزیک ریاضی
پیش نمایش صفحه اول مقاله
Novel analytical and numerical approach to modeling low-frequency noise in semiconductor devices
چکیده انگلیسی
In this work, based on robust experimental results, we derive a novel theoretical probabilistic approach to model the low-frequency noise power S(f) in semiconductor devices. Using the proposed approach we obtained, analytically, the average of the integrated noise power Wp=∫fLfHS(f)df as a function of the frequency bandwidth [fL,fH], showing that 〈Wp〉∝ln2(fH/fL). The second moment and the relative error in Wp are also calculated. A numerical fit for the relative error was performed, showing that lower and upper bound estimates to noise power depend only on the ratio fH/fL.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica A: Statistical Mechanics and its Applications - Volume 362, Issue 2, 1 April 2006, Pages 277-288
نویسندگان
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