کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9801349 | 1515480 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical processes of red emission from Eu doped GaN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A single crystalline Eu-doped GaN was grown by gas-source molecular beam epitaxy and photoluminescence (PL) properties were studied. The PL spectra show red-emission at 622Â nm originating from intra 4f-4f transition of Eu3+ ion without band-edge emission of GaN. The peak shift of the red-emission with the temperature variation from 77Â K to room temperature is less than 1.6Â meV, and thermal quenching of the luminescence was found to be small compared with the band-to-band transition. Fourier transform infrared spectra showed an absorption peak at about 0.37Â eV, which may be due to a deep defect level. The intensity of the red luminescence and the defect-related absorption peak increased with increasing Eu concentration, and a close correlation in the intensity was observed between them. These results suggest that the deep defect level plays an important role in the radiative transition of Eu3+ ion in GaN and the optical process for the luminescence at 622Â nm was discussed with the relation to the defect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Science and Technology of Advanced Materials - Volume 6, Issue 6, September 2005, Pages 644-648
Journal: Science and Technology of Advanced Materials - Volume 6, Issue 6, September 2005, Pages 644-648
نویسندگان
Junji Sawahata, Hyungjin Bang, Jongwon Seo, Katsuhiro Akimoto,