کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9801350 | 1515480 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ultrafast semiconductor spectroscopy using terahertz electromagnetic pulses
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ultrafast semiconductor spectroscopy using terahertz electromagnetic pulses Ultrafast semiconductor spectroscopy using terahertz electromagnetic pulses](/preview/png/9801350.png)
چکیده انگلیسی
Terahertz electromagnetic pulses can serve as a new and unique tool for various types of spectroscopy. We first characterized the temporal and spatial properties of THz pulses generated from a large-aperture photoconductive antena, and then used them for the study of the ultrafast dynamics of electrons in semiconductros. We studied the dynamics of electrons generated by femtosecond optical pulses with positive and negative excess energies in GaAs and InP by observing the waveform of the emitted THz radiation. Subpicosecond intraband relaxation was observed with positive excess energies. With negative excess energies, a picosecond transition from the Urbach state to free carrier states was observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Science and Technology of Advanced Materials - Volume 6, Issue 6, September 2005, Pages 649-655
Journal: Science and Technology of Advanced Materials - Volume 6, Issue 6, September 2005, Pages 649-655
نویسندگان
Toshiaki Hattori, Satoshi Arai, Keisuke Ohta, Aya Mochiduki, Shin-ichi Ookuma, Keiji Tukamoto, Rakchanok Rungsawang,