کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9809531 | 1517712 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dielectric confinement and surface plasmon damping in Au: semiconductor nanocomposite thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Dielectric confinement and surface plasmon damping in Au: semiconductor nanocomposite thin films Dielectric confinement and surface plasmon damping in Au: semiconductor nanocomposite thin films](/preview/png/9809531.png)
چکیده انگلیسی
Au metal clusters are embedded in amorphous Si matrix using alternating sputtering method. Although the nominal thickness of Au metal layer was adjusted as small as 1 nm, the resultant microstructure showed the Bruggeman geometry consisting of a networked Au clusters. Using the thin film data of the constituent materials Au and Si, the optical absorption in the effective medium was calculated, and the effects of composite geometry, particle size, and shape distributions were analyzed. Inhomogeneous broadening of absorption band is thought to be most significant in this BG geometric sample, but the remaining discrepancy between the calculated and the measured absorption may be ascribed to the presence of energy dissipation process due to a finite Schottky barrier built up at the metal-semiconductor junction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 198, Issues 1â3, 1 August 2005, Pages 51-54
Journal: Surface and Coatings Technology - Volume 198, Issues 1â3, 1 August 2005, Pages 51-54
نویسندگان
K.S. Lee, I.H. Kim, T.S. Lee, B. Cheong, J.G. Park, J.G. Ha, W.M. Kim,