Preparation of Si-C-H thin films embedded with high oriented (100) polycrystalline silicon

Si-C-H thin films were prepared by RF-plasma enhanced chemical vapor deposition (RF-PECVD) at the substrate temperature of 300 °C, in which SiH4 and CH4 were used as the resource gases and hydrogen as the carrying vehicle. X-ray diffraction (XRD), Raman spectroscopy (RS), infrared absorption spectroscopy (IR), and high-resistance meter were used to measure the microstructure and resistivity, respectively. The results indicate that the thin films deposited on (100) silicon substrate at the temperature of 300 °C are Si-C-H thin films, and the content of C atoms increases with increasing both CH4 gas source and deposition power. A multiphase microstructure of the Si-C-H thin films is obtained, which reveals that the high oriented (100) polycrystalline silicon embeds in the Si-C-H matrix, in which crystalline SiC phase tends to form. The oriented silicon crystalline phase increases with increasing deposition power below 150 W and keeps almost constant above 150 W. The resistivity of Si-C-H thin film, which decreases from 1010 to 105 (Ωcm) as silicon crystalline phase increases in the Si-C-H thin film, is much more accordant with the content of silicon crystalline phase embedded in Si-C-H.