کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9809572 | 1517712 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nitrogen and aluminum codoped p-type ZnO films and ZnO p-n homojunctions
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The most significant impediment to the widespread exploitation of ZnO-related materials in electronic and photonic applications is the difficulty in p-type doping and synthesizing ZnO p-n homojunctions. To resolve the problem of p-type doping in ZnO, nitrogen and aluminum (N-Al) codoped ZnO films were prepared by ultrasonic spray pyrolysis technique. The structural, optical and electrical properties of the as-grown ZnO films were investigated by X-ray diffraction (XRD), photoluminescence (PL) spectra, Hall-effect and Seebeck-effect measurements. The results demonstrate that the N-Al codoped ZnO films show extremely excellent p-type conduction and good ultraviolet emission characteristics. Furthermore, ZnO homojunctions were synthesized by depositing the undoped ZnO layers on the N-Al codoped ZnO layers, and the current-voltage (I-V) characteristics measured from the two-layer structure show a typical rectifying characteristics of p-n junctions with a low turn-on voltage of about 2.5 V.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 198, Issues 1â3, 1 August 2005, Pages 253-256
Journal: Surface and Coatings Technology - Volume 198, Issues 1â3, 1 August 2005, Pages 253-256
نویسندگان
Canyun Zhang, Xiaomin Li, Jiming Bian, Weidong Yu, Xiangdong Gao,