کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9809595 1517712 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ultrathin sol-gel titanium oxide hole injection layer in OLEDs
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Ultrathin sol-gel titanium oxide hole injection layer in OLEDs
چکیده انگلیسی
In this work, we report an application of sol-gel process in the fabrication of OLEDs. The hole injection efficiency was improved tremendously by inserting an ultrathin sol-gel titanium oxide buffer layer between the ITO anode and hole transport layer. The turn-on voltage of the device with the buffer layer was lowered from 10 V to 3.1, and the operating voltage (at 200 cd/m2) from 13.8 to 6.4 V, compared with the device without such a buffer layer. These devices demonstrated a maximum luminance of ∼40,000 cd/m2. The mechanisms behind the enhanced performance were discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 198, Issues 1–3, 1 August 2005, Pages 357-361
نویسندگان
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