کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9809826 | 1517717 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of r.f. substrate bias on the properties of carbon nitride films produced by an inductively coupled plasma chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
It was found that nitrogen content of films were in the range of 13.5-21.4 at.%, decreased with increasing bias voltage. As the bias voltage was increased, the deposition rate decreased due to resputtering and the substrate temperature increased as a result of the energetic ions. The film hardness increased with increasing bias voltage up to 30 GPa at â60 V. The results from Raman and XPS analyses showed that the amount of sp3 CC or sp3 CN bonds increased with increasing bias voltage, while the number of the CH, NH and sp2 CN bonds decreased.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 193, Issues 1â3, 1 April 2005, Pages 152-156
Journal: Surface and Coatings Technology - Volume 193, Issues 1â3, 1 April 2005, Pages 152-156
نویسندگان
H.Y. Lee, D.K. Lee, D.H. Kang, J.J. Lee, J.H. Joo,