کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9809862 | 1517717 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of plasma oxynitridation of Si(001) by NH3/N2O/Ar remote plasma processing
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Plasma oxynitridation of Si(001) was carried out by NH3/N2O/Ar remote plasma generated from a toroidal-type remote plasma source in a commercial 8-in. plasma-enhanced chemical vapor deposition (PECVD) system. Oxynitridation experiments of Si were performed by varying the NH3/N2O/Ar gas flow ratio and plasma exposure time at the substrate temperature of 500 °C. Time evolution of the layer thickness, chemical composition, and bonding characteristics of the silicon oxynitride layers were investigated by various analytical methods including X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and high-resolution transmission electron microscopy (HR-TEM). The results showed a formation of the silicon oxynitride layers with the film thickness of 1.5-2.0 nm and different compositions depending on the experimental conditions. N content incorporated in the silicon oxynitride increases but the growth rate of silicon oxynitride layer decreases with increasing NH3/N2O gas flow ratio.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 193, Issues 1â3, 1 April 2005, Pages 350-355
Journal: Surface and Coatings Technology - Volume 193, Issues 1â3, 1 April 2005, Pages 350-355
نویسندگان
S.C. Kang, C.H. Oh, N.-E. Lee, T.K. Kwon,