کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9809895 | 1517718 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carbon ion implantation into pure aluminium at low fluences
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work presents selected results from carbon ion implantation into pure Al matrix. The carbon ions were implanted with an ion energy of 25 keV and fluences of 1Ã1021 and 2Ã1021 C+/m2 at room temperature (RT) and elevated temperature of 400 °C. Elastic recoil detection analysis (ERDA), grazing incidence X-ray diffraction analysis (GIXRD), Raman spectroscopy and high resolution electron microscopy (HRTEM) show the formation of embedded Al4C3 precipitates with carbon concentrations below its stoichiometric level. At RT ion implantation, the Al4C3 precipitates have an average grain size in the order of 2-4 nm. For carbon ion implantation at 400 °C, the precipitates grow up to approximately 20 nm in diameter and are randomly distributed in the implanted region. The carbon excess, not bound in the Al4C3 precipitates, forms highly disordered C-C clusters of approximately 0.2-0.4 nm in size. Implantation at a temperature of 400 °C reduces drastically the carbon clusters content due to the growth of the Al4C3 precipitates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 192, Issues 2â3, 21 March 2005, Pages 317-322
Journal: Surface and Coatings Technology - Volume 192, Issues 2â3, 21 March 2005, Pages 317-322
نویسندگان
C.E. Foerster, T. Fitz, T. Dekorsy, F. Prokert, U. Kreiβig, A. Mücklich, E. Richter, W. Möller,