کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9816836 1518375 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The growth of Zn on a Si(1 0 0)-2×1 surface
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
The growth of Zn on a Si(1 0 0)-2×1 surface
چکیده انگلیسی
Adsorption of Zn atoms on a Si(1 0 0)-2×1 surface was studied by scanning tunneling microscopy at room temperature. Narrow lines are grown perpendicular to the Si-dimer rows of the [1 1 0] direction at low coverage. The narrow line is formed by arraying rectangular Zn3 dots, where a dot is composed of one Zn atom on a Si dimer and the other two in the neighboring two hollow sites. When the Si(1 0 0)-2×1 surface is covered with one monolayer of Zn, a 4×1 structure is established. More deposition of Zn on the 4×1 monolayer grows into three-dimensional Zn islands.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 105, Issues 1–4, November 2005, Pages 6-11
نویسندگان
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