کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9816853 | 1518375 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface morphology of self-assembled vertically stacked InAs quantum dots by atomic force microscopy
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In quantum dots (QDs) three-dimensional confinement of carriers leads to energy level discreteness to exhibit a rich spectrum of phenomena including quantum confinement, exchange splittings, Coulomb blockade, and multiexciton transitions. In this paper, five-period vertically stacked samples with size-controlled growth were grown by molecular-beam epitaxy (MBE) with solid sources, and the surface morphologies of self-assembled vertically stacked InAs quantum dots were characterized by atomic force microscopy (AFM). We described structural and optical properties of vertically aligned InAs QDs embedded in Al0.5Ga0.5As and employed a size-controlled growth procedure for the QDs. The strongly localized electron coupling effect and many-body effect lead to quantum dephase splitting of the ground state energy of the vertically aligned InAs QDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 105, Issues 1â4, November 2005, Pages 125-128
Journal: Ultramicroscopy - Volume 105, Issues 1â4, November 2005, Pages 125-128
نویسندگان
Shuwei Li, Kazuto Koike,