Photoelectric effect and transport properties of a single CdS nanoribbon

A single CdS nanoribbon-based photoelectric detector was fabricated by the shadow mask technique and conventional lithography. Atomic force microscopy (AFM) and micro-Raman techniques were applied to acquire the morphology and structure of a single CdS nanoribbon. Transmission electron microscopy reveals a single crystalline interior with a few local defects. From the current-voltage (I-V) measurements, it is found that the maximum current reached 15 μA, and the photoconductivity variation could be as high as 25,000, as well as the corresponding current density is estimated to be about 7.0×105 A/cm2. Besides the ohmic characteristic of the I-V curve by photoelectric effect, the nonlinear I-V curve owing to the Schottky contact is also found. The transient photocurrent response indicates the slow process by carrier trapping.