Ion beam analysis of GaInAsSb films grown by MOVPE on GaSb

The quaternary semiconductor GaInAsSb is an interesting candidate for thermophotovoltaic applications. Precise control of the crystal composition is required. GaInAsSb layers with a thickness of 300 nm have been grown by metal organic vapor phase epitaxy on (1 0 0) GaSb wafers with 2° off-orientation towards (1 1 0) and (1 1 1)A. The composition was determined with a combination of Rutherford backscattering and grazing detection particle induced X-ray emission. An influence of the miscut direction as well as the TBAs flow on the In incorporation in GaInAsSb is observed.