The influence of the ion implantation temperature and the dose rate on smart-cut© in GaAs

The temperature and dose rate dependence of the smart-cut© process in GaAs have been investigated in this paper. The distribution of hydrogen and the implantation damage in the samples were studied by ion beam analysis and X-ray diffraction. It was found that at higher temperatures, hydrogen is mobile in the lattice and can rearrange into the platelets, microcracks and bubbles which are present in blistered material, thus relieving the strain in the lattice. The dose rate was also found to be significant for the smart-cut process, as blistering and exfoliation are inhibited at low dose rates.