Transfer of thin silicon layers by MeV hydrogen implantation

In this work, we produced thin silicon layers by means of hydrogen implantation. We used 650 keV, 1.0 MeV, 1.5 MeV and 2.0 MeV hydrogen for layer thicknesses of about 9, 16, 30 and 48 μm according to TRIM simulations. The critical dose was found to be 5 × 1016 H+/cm2 for the first three energies while the highest energy required a higher dose: between 5 × 1016 and 8 × 1016 H+/cm2. Annealing at 600 °C in nitrogen atmosphere result in the effective transfer with the expected thickness. High quality Si layers are achieved.