Iron distribution in the implanted silicon under the action of high-power pulsed ion and laser beams

The results of the investigation of the phase composition, microstructure and dopant depth distribution in silicon layers implanted with iron ions and annealed with pulsed ion and laser beams are given. X-ray diffraction data indicate the phase transition FeSi → β-FeSi2 with increasing of the pulse energy density. After ion implantation and pulsed treatments, silicon layers have a cellular structure related with the low solubility of iron in silicon. Depending on the iron atomic concentration, either segregation of the dopant to the surface or diffusion into silicon takes place. This dependence is explained by rapid diffusion of iron in liquid silicon and increase of the dopant distribution coefficient when increasing dopant concentration. The results of the computer simulation agree well with experimental data on the iron depth distribution and give the segregation co-efficient close to 1 at the highest dopant concentration.