Considerations about PIXE analysis under channeling conditions

In this work we have studied some aspects of the X-ray yield induced by protons and H3+ molecules channeling along the 〈1 0 0〉 and 〈1 1 0〉 axial directions in GaAs and Si. In this way, it was possible to assess how a PIXE experiment could be affected when such analysis is carried out under channeling conditions. Since the ionization cross sections and the stopping powers have a strong dependence on whether the incoming ion is channeled or not in a particular material, this dependence, in the case of a channeling experiment, may lead to severe distortions of the final elemental concentrations if these effects are not taken into account properly. The results obtained for the matrix analysis of GaAs carried out with the GUPIX software package indicate that the elemental concentrations around the center of the channels are in good agreement with the expected ones. Finally, the potentialities of a channeling PIXE experiment using H3+ molecules are discussed.