کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9817582 1518767 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Rutherford backscattering and X-ray reflectivity analysis of tunnel barriers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Rutherford backscattering and X-ray reflectivity analysis of tunnel barriers
چکیده انگلیسی
The properties of the insulating barrier junctions are determinant to the properties of silicon-based spin transistors. They are strongly influenced by their layer thicknesses and composition. Hence, forming the barrier is a key factor in fabricating a functional device. In this work, we investigate the formation of zirconium oxide and mixed zirconium and aluminium oxide ultra-thin barriers, by deposition of 5 to 10 Å thick Zr and/or Al layers which are then oxidised in a remote Ar/O2 plasma on a previously smoothed Si wafer. We determine the thickness and composition of the layers using a combination of grazing angle Rutherford backscattering and X-ray reflectivity. We study the oxidation of the Zr and Al layers, and show that, within the sensitivity of the experiments, no diffusion between the barriers and the Si substrate occurred.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 240, Issues 1–2, October 2005, Pages 365-370
نویسندگان
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