Simultaneous depth profiling of the 12C and 13C elements in different samples using (d,p) reactions

In the framework of this study we have performed 400 keV 13C ions implantation into polished copper substrates at different temperatures and implanted doses with a 2 MV Tandem accelerator. Using the reactions described above, we have studied the evolution of 13C depth profile as a function of implanted doses and temperature. We have also determined the origin of surface contamination that appears during the implantation process.