کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817674 | 1518769 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of plasma treatment on low-k dielectric films in semiconductor manufacturing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
High-resolution X-ray reflectometry (XRR) at SSLS' XDD beamline has been used to characterise films of low dielectric constant materials. In this paper, we present results of reflectometry studies of ultra-low k dielectric films made of commercial SiLK and carbon doped silicon oxide, i.e. SiOCH (MSQ, methylsilsesquioxane). Reflectivity reveals that the films can suffer severe roughening in surface and change in their thickness depending on different plasma treatments. The densities of the layers can change, which will lead to changes in the k-values. The results are being used for the selection and optimization of plasma processes used in semiconductor manufacturing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 238, Issues 1â4, August 2005, Pages 310-313
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 238, Issues 1â4, August 2005, Pages 310-313
نویسندگان
P. Yang, D. Lu, R. Kumar, H.O. Moser,