کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817720 | 1518771 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ultra shallow p+/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ultra shallow p+/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation Ultra shallow p+/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation](/preview/png/9817720.png)
چکیده انگلیسی
Plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) was combined with the selective absorption modulation using SiO2 layer to form ultra-shallow p+/n junction. By depositing a controlled thickness of SiO2 layer on top of the silicon substrate, we were able to confirm the reduction of laser energy density by 400 mJ/cm2 (29%) and the formation of ultra-shallow junction at 12.7 nm (@1018 cmâ3) with Rs of 670 Ω/sq., which demonstrated the high feasibility of this new method.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 58-61
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 58-61
نویسندگان
C.G. Jin, Y. Sasaki, K. Okashita, H. Tamura, H. Ito, B. Mizuno, K. Tsutsui, S. Ohmi, H. Iwai,