Enhanced thermal and morphological stability of Ni(Si1−xGex) growth on BF2+-preamorphized Si0.8Ge0.2 substrate

The stability of nickel germanosilicide formed on Ni thin films on Si0.8Ge0.2 was found to be enhanced by the BF2+-preamorphization of the epitaxial Si-Ge layer. Agglomeration of polycrystalline Ni(Si1−xGex) is retarded by 100 °C in the BF2+-implanted samples. The growth of laterally uniform Ni(Si1−xGex) and resistance to agglomeration at high temperature in the BF2+-implanted samples are attributed to the retardation of the growth of Ni(Si1−xGex) grains by the presence of fluorine bubbles. Sheet resistance measurement was found to correlate well with the transmission electron microscope observation.