The influence of the ion implantation temperature and the flux on smart-cut© in GaAs

The dependence of hydrogen flux and substrate temperature during implantation on the smart-cut© process in GaAs have been investigated in this paper. The lattice disorder in the samples was studied by ion beam analysis. It was found that both the flux and the implant temperature are significant for the smart-cut process. As the flux increases, the degree of exfoliation and the mean blister size increases, while the number density of blisters falls, indicating that blister evolution is enhanced at high dose rates.