کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817750 | 1518771 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
High-quality, thin relaxed Si0.8Ge0.2 layers grown on Si(1Â 0Â 0) by ultrahigh-vacuum chemical vapor deposition (UHVCVD) have been formed with hydrogen (H)-implantation and subsequent thermal annealing. H-implantation was used to introduce a layer with a high density of defects (cavities) below a 200-nm-thick strained Si0.8Ge0.2. The peak of the implanted profile was located just â¼50Â nm below the Si0.8Ge0.2/Si interface. The dependence of residual strain in pseudomorphic Si0.8Ge0.2 layer on the annealing temperature has been investigated. By adjusting the dose of H-implantation and the subsequent annealing conditions, almost relaxed (â¼95%) Si0.8Ge0.2 layers with a smooth surface were achieved. The method provides a simple approach for the formation of thin relaxed Si0.8Ge0.2 with reduction in surface roughness for advanced complementary metal-oxide-semiconductor electronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 217-222
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 217-222
نویسندگان
K.F. Liao, P.S. Chen, S.W. Lee, L.J. Chen, C.W. Liu,