کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9817762 1518771 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Approaches to single wafer high current ion implantation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Approaches to single wafer high current ion implantation
چکیده انگلیسی
Single wafer processing is gaining increasing market acceptance for high current ion implantation, particularly for 65 nm technologies. We review the reasons for this and discuss the two competing approaches to single wafer high current implant design. These are a broad beam, single axis mechanical scan approach and a spot beam, dual axis mechanical scan approach. We compare and contrast the design complexities of each as well as their advantages and limitations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1–2, August 2005, Pages 284-289
نویسندگان
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